The influence of rare earth elements on the optical properties of silicon epitaxial films

Authors

  • Sayitova S Berdaq Karakalpak State University, Nukus.
  • Saparniyazova G Karakalpak Institute of Agriculture and Agricultural Technologies, Nukus, Uzbekistan
  • Sharibaev M.

DOI:

https://doi.org/10.62480/tjet.2026.vol52.pp37-39

Keywords:

photoluminescence, epitaxial film, deformation

Abstract

The results of growing erbium-doped silicon epitaxial layers using two different growth modes are presented: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon layer deposited by PFE on a cold substrate and subsequently annealed exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE

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Published

2026-01-22

Issue

Vol. 52 (2026): TJET

Section

Articles

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How to Cite

The influence of rare earth elements on the optical properties of silicon epitaxial films. (2026). Texas Journal of Engineering and Technology, 52, 37-39. https://doi.org/10.62480/tjet.2026.vol52.pp37-39