Effect Of The Pressure On The Properties Of OxygenContaining Silicon Single Crystals

Authors

  • Abdumajid Turaev Center for the Development of Nanotechnology at the National University of Uzbekistan named after Mirzo Ulugbek
  • G‘anijon Raxmonov Center for the Development of Nanotechnology at the National University of Uzbekistan named after Mirzo Ulugbek
  • Azim Soatov Center for the Development of Nanotechnology at the National University of Uzbekistan named after Mirzo Ulugbek
  • Omadbek Rayimjonov Center for the Development of Nanotechnology at the National University of Uzbekistan named after Mirzo Ulugbek
  • Rasul Burxanov Center for the Development of Nanotechnology at the National University of Uzbekistan named after Mirzo Ulugbek
  • Noiba Batirova National University of Uzbekistan named after Mirzo Ulugbek

DOI:

https://doi.org/10.62480/tjms.2025.vol47.6376.pp40-45

Keywords:

silicon, oxygen

Abstract

It is known[1] that in silicon single crystals grown by the Czochralski method, the oxygen content can be controlled within (2 - 8) ×1017 cm-3 . In crystals grown by the FZ method (the crucible-less floating zone technique or "floating zone” method), both in vacuum and in the inert gas atmosphere, the oxygen content is less than 3×1016 cm-3 . Hence, it is clear why the properties of silicon with oxygen content in the range 3 × 1016 - 2 ×1017 cm-3 are least studied.

Downloads

Published

2025-08-29

Issue

Vol. 47 (2025): TJM

Section

Articles

License

Copyright (c) 2025 Texas Journal of Multidisciplinary Studies

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

User Rights

Under the Creative Commons Attribution-NonCommercial 4.0 International (CC-BY-NC), the author (s) and users are free to share (copy, distribute and transmit the contribution).

Rights of Authors

Authors retain the following rights:
1. Copyright and other proprietary rights relating to the article, such as patent rights,
2. the right to use the substance of the article in future works, including lectures and books,
3. the right to reproduce the article for own purposes, provided the copies are not offered for sale,
4. the right to self-archive the article.

How to Cite

Effect Of The Pressure On The Properties Of OxygenContaining Silicon Single Crystals. (2025). Texas Journal of Multidisciplinary Studies, 47, 40-45. https://doi.org/10.62480/tjms.2025.vol47.6376.pp40-45