Ga1-xAlxAs nanostructures grown on the GaAs Surface by Ion Implantation
Keywords:
morphology, ion implantation, electronic structureAbstract
The surface structure and electronic characteristics of nanocrystalline phases and 2-7-nm-thick Ga1-xAlxAs films formed on the GaAs(111) surface by Al+ ion implantation are investigated. The bandgap Eg of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size is determined to be 2.8-2.9 eV
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