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Abstract

The surface structure and electronic characteristics of nanocrystalline phases and 2-7-nm-thick Ga1-xAlxAs films formed on the GaAs(111) surface by Al+ ion implantation are investigated. The bandgap Eg of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size is determined to be 2.8-2.9 eV

Keywords

morphology ion implantation electronic structure

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How to Cite
Sodikjanov J.Sh. (2023). Ga1-xAlxAs nanostructures grown on the GaAs Surface by Ion Implantation. Texas Journal of Engineering and Technology, 20, 9–13. Retrieved from https://zienjournals.com/index.php/tjet/article/view/3907

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